- Master's degree + 5 years, OR, PhD + 2 years of relevant experience in the area of PA design including MIC and/or MMIC is a must.
- Experience in working with Keysight ADS or AWR Microwave Office is a must.
- Strong knowledge of RF PA design principles and testing methodologies is a must.
- Proficiency in simulation tools such as CST or HFSS is preferred.
- Good understanding and practical design experience in compound semiconductor technologies such as GaAs and GaN is preferred.
- Master's degree in Electrical Engineering or a related field is preferred
- Relevant experience in PA design and testing specifically for the defense or telecom sectors is preferred.
RF Design Engineer - Bengaluru, India - AGNIT Semiconductors Pvt Ltd
Description
Company Description
AGNIT Semiconductors Private Limited is India's only integrated device manufacturer of Gallium Nitride (GaN) solutions for RF electronics. Our differentiated IP and expertise in GaN materials, processes, and devices have been developed over 15 years of R&D at the Indian Institute of Science (IISc), Bangalore. With a founding team that has over 100 years of aggregate experience, we are committed to delivering cutting-edge solutions to our customers.
Role Description
This is a full-time on-site role for an RF Design Engineer located in Bengaluru. The RF Design Engineer will be responsible for RF design, more specifically GaN power amplifier (PA) design in both MMIC and hybrid MIC forms in the L-,S-,C- and X-bands. The RF Design Engineer will work closely with cross-functional teams such as the packaging and assembly teams and external PCB vendors to fabricate, assemble and test the designed PA boards and the GaN devices themselves using load pull, small-signal and other appropriate RF test benches. They will also interface with the Process Integration team for the design and characterization of passives for MMIC PAs.
Qualifications